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Fabless firm ElectroPhotonic-IC Inc (ELPHiC) of Ottawa, Ontario, Canada, which provides indium phosphide (InP) optoelectronic chips, has made available samples of its integrated optics/electronics receiver. This follows sampling of its 10G 1271 laser for ONU applications (which has shown high reliability, the firm says).

ELPHiC has developed optoelectronic integration technology, leading to InP chips enabling higher performance, lower power consumption and increased reliability for lasers and PIN receivers. This integration eliminates the need for avalanche photodiodes (APDs), reducing the cost of the receiver.

ELPHiC will also soon announce sampling dates for its EML for 224Gb/s applications.

“By integrating key optical and electronic elements on the same InP semiconductor substrate with the analog amplification circuitry, we create an architectural shift in building optics chipsets that significantly improve performance and power, lower cost, and reduce module form factor,” says CEO Jim Hjartarson. “Our patented PIN architecture also allows for sensitivity levels comparable to those of APDs,” he adds.

“The demand for lasers and receivers from module manufacturers of PON and datacom markets has seen an unprecedented increase over the past three years,” says Christian Ilmi, VP worldwide sales, who recently joined ELPHiC from the optical module manufacturing industry. “The recently announced government funding for PON deployments will add even more pressure to this demand. ELPHiC’s timing for cheaper and more effective optics could not be better,” he adds.

“Finally, the promise of monolithic integration of optical devices and electronics is coming to market,” says Joe Costello, chairman of the board and a Silicon Valley veteran. “With the benefits of ELPHiC’s technology, the performance of optical links in PON, data centers and other emerging innovative markets will take a giant leap forward.”

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