By David Manners 25th August 2022
Flosfia, a Japanese spin-off from Kyoto University, backed by Mitsubishi, Denso and the Development Bank of Japan, is about to move into mass production of gallium oxide-based PMICs, reports the Nikkei.
Flosfia claims these gallium oxide devices reduce power loss by 70% compared with current devices, and can reduce EV power consumption by 10%.
Flosfia is looking to use Japanese foundries to make several hundred thousand devices a month by summer 2023 and sales of $732 million by 2030.
The devices will be sold to auto parts makers.
Gallium Oxide (Ga2 O3 ) comes in five different phases, with its α-phase (which takes the corundum crystal structure) having the most attractive material properties.
With a wide bandgap of 5.3eV and high electric breakdown field strength, α-Ga2 O3 can better withstand high-voltage applications, making it possible to replace existing silicon and silicon carbide (SiC) power semiconductors.
Kyoto University demonstrated the first single-crystal growth of α-Ga2 O3 on sapphire in 2008. In 2015 an α-Ga2 O3 Schottky barrier diode (SBD) showing low specific on-resistance of 0.1mΩcm2 was fabricated by Flosfia..
Flosfia, which spun out of Kyoto University in 2011, later launched an engineering sample of an α-Ga2 O3 SBD in a TO220 package.
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