FZ Single Crystal Silicon Wafer 2'' 3'' 4'' 5'' 6'' widely used for electric and electronic devices such as, power rectifier, thyristor, GTO, power MOSFET, IGBT, etc
Western Minmetals (SC) Corporation is a major supplier of FZ or CZ 2-8inch single crystal (Monocrystal) silicon ingot and wafer, Neutron Transmutation Doping (NTD) silicon wafer, and semiconductor compounds such as Indium Phosphide (InP), Gallium Phosphide (GaP), Indium Antimonide (InSb) and Indium Arsenide (InAs) substrate etc for solar photovoltaic, integrated circuits, transistor and other electronic industry.
It is our goal to be a consistent, reliable and an affordable source for our global clients at any time.
| No. | Item | Standard Specification | |||||
| 1 | Size | 2'' | 3'' | 4'' | 5'' | 6'' | |
| 2 | Diameter | mm | 50.8±0.3 | 76.2±0.3 | 100±0.5 | 125±0.5 | 154±0.5 |
| 3 | Growth Method | FZ | |||||
| 4 | Dopant | Boron / Phosphorus | |||||
| 5 | Conductivity Type | P / N | |||||
| 6 | Thickness | μm | 325, 375, 425, 525, 625, 1,000µm±10, or as required | ||||
| 7 | Orientation | <100> <110> ±1 | |||||
| 8 | Primary Flat Orientation | As SEMI | |||||
| 9 | Primary Flat Length | mm | As SEMI | ||||
| 10 | Secondary Flat Orientation | As SEMI | |||||
| 11 | Secondary Flat Length | mm | As SEMI | ||||
| 12 | TTV | μm | ≤10 | ||||
| 13 | TIR | μm | ≤10 | ||||
| 14 | Bow | μm | ≤10 | ||||
| 15 | Warp | μm | ≤10 | ||||
| 16 | Resistivity | Ω.cm | 10-150 | ||||
| 17 | RRV | % | ≤20, ≤25 | ||||
| 18 | Front / Backside Finish | Lapped / Etched / Polished | |||||
| 19 | Surface Quality | No chip, dimple fracture, haze, mound or orange peel | |||||
| 20 | Contamination | No dirt, oil stain, soap or glue remains | |||||
| 21 | Edge Profile | Rounded or as required | |||||
| 22 | Laser Mark | Back or front side as required | |||||
| 23 | Packing | 25pcs in foam box or cassette, carton box outside, or as required | |||||
Western Minmetals (SC) Corporation is a major supplier of FZ or CZ 2-8inch single crystal (Monocrystal) silicon ingot and wafer, Neutron Transmutation Doping (NTD) silicon wafer, and semiconductor compounds such as Indium Phosphide (InP), Gallium Phosphide (GaP), Indium Antimonide (InSb) and Indium Arsenide (InAs) substrate etc for solar photovoltaic, integrated circuits, transistor and other electronic industry.
It is our goal to be a consistent, reliable and an affordable source for our global clients at any time.