Click here to log in or
Liu Jia, Chinese Academy of Sciences
The team of Professor Ye Jichun from the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences (CAS) and researchers from the University of Nottingham Ningbo, China revealed the potential dynamics of silicon oxide (SiOx) tunneling, including pinhole formation processes and electrical Load carrier transmission mechanism. The research was published in Cell Reports Physical Science.
As one of the most promising alternatives to reduce costs and increase equipment efficiency, the tunnel oxide passivation contact (TOPCon) technology has attracted considerable attention in the photovoltaic (PV) community. However, the core structure of TOPCon, that is, the physical mechanism of the polysilicon (poly-Si)/SiOx/crystalline silicon (c-Si) junction has not yet been elucidated, which limits the further improvement of device efficiency.
In order to solve this problem, NIMTE researchers conducted a large number of experiments and simulations to reveal the potential charge carrier dynamics of the SiOx tunnel junction.
Through detailed experiments, the formation process of pinholes was revealed, indicating that the interfacial stress caused by the mismatch of thermal expansion coefficient at high temperature may be the cause of the rupture of the SiOx film.
In addition, the simulation results provide direct evidence for the theory of charge carrier transport, proving that tunnel charge carrier transport and direct transport through pinholes work together. Which mechanism plays the leading role depends on the density and size of the pinholes and the thickness of SiOx.
In addition, considering passivation and contact behavior at the same time, a basic physical model with local pinholes was developed. The detailed current recombination analysis combined with the device efficiency prediction shows that the potential device efficiency can reach 27%.
This research on pinhole formation and charge carrier transport mechanism not only reveals the potential device physical characteristics of polysilicon/SiOx/c-Si junctions, but also releases high TOPCon device design efficiency, which is important for academic and industrial circles. Are all crucial. Further exploration of the double-sided contact solar cell has created a new world record of 26% efficiency. More information: Zhenhai Yang et al., The charge carrier dynamics of a silicon oxide tunnel junction mediated by local pinholes, Cell Reports Physical Science (2021 ). DOI: 10.1016/j.xcrp.2021.100667 Journal Information: Cell Report Physical Science
Citation provided by the Chinese Academy of Sciences: Researchers unravel the charge carrier dynamics of silicon oxide tunnel junctions (December 6, 2021) Retrieved on December 14, 2021 from https://phys.org/news/2021-12-unravel -carrier-dynamics-silicon -oxide.html This document is protected by copyright. Except for any fair transaction for private learning or research purposes, no part may be copied without written permission. The content is for reference only.
More matter from atoms and condensed matter
If you encounter spelling errors, inaccuracies, or want to send an edit request for the content of this page, please use this form. For general inquiries, please use our contact form. For general feedback, please use the public comment section below (please follow the guidelines).
Please select the most suitable category to facilitate the processing of your request
Thank you for taking the time to provide feedback to the editor.
Your feedback is very important to us. However, due to the large volume of messages, we do not guarantee a separate reply.
Your email address is only used to let the recipient know who sent the email. Neither your address nor the recipient's address will be used for any other purpose. The information you enter will appear in your email, and Phys.org will not keep it in any form.
Send weekly and/or daily updates to your inbox. You can unsubscribe at any time, and we will never share your details with third parties.
Medical research progress and health news
The latest engineering, electronic and technological advancements
The most comprehensive technology news report on the Internet
This website uses cookies to assist in navigation, analyze your use of our services, collect data for advertising personalization, and provide content from third parties. By using our website, you acknowledge that you have read and understood our privacy policy and terms of use.