high purity 99.99 Boron Nitride Pyrolytic Boron Nitride ceramic crucible
1.Product color is between ivory white and orange-brown,nontoxic,imporosity,east processing.
2.The purity is up to 99.99%, surface densification,good has barrier properties.
3.The strength increases as temperature rises and peaked at 2200ºC, heater-resistance.
4.Acid,alkali,salt and organic reagent resistant.Meanwhile,it does not react with the
majority of molten-metal and semiconductor material.
5.Excellent thermal shock resistance,excellent thermal conductivity,low thermal expansion coefficient.
6.High resistance,high dielectric strength,low dielectric constance,low dissipation factor,
excellent microwave and infrared ray ability.
7.It has obvious anisotropy in the mechanics, heat and electricity.
Application
1.The crucible and substrate of semi-conductor single crystal and III-V compound synthesis
2.LEC crucible for the synthesis of GaAs,InP,GaP
3.MBE crucible for Molecular Beam Epitaxial.
4.VGF crucible
5.Other customizable PBN products
Product parameter
1.Product color is between ivory white and orange-brown,nontoxic,imporosity,east processing.
2.The purity is up to 99.99%, surface densification,good has barrier properties.
3.The strength increases as temperature rises and peaked at 2200ºC, heater-resistance.
4.Acid,alkali,salt and organic reagent resistant.Meanwhile,it does not react with the
majority of molten-metal and semiconductor material.
5.Excellent thermal shock resistance,excellent thermal conductivity,low thermal expansion coefficient.
6.High resistance,high dielectric strength,low dielectric constance,low dissipation factor,
excellent microwave and infrared ray ability.
7.It has obvious anisotropy in the mechanics, heat and electricity.
Application
1.The crucible and substrate of semi-conductor single crystal and III-V compound synthesis
2.LEC crucible for the synthesis of GaAs,InP,GaP
3.MBE crucible for Molecular Beam Epitaxial.
4.VGF crucible
5.Other customizable PBN products
Product parameter
| Property | Unit | Value | |
| Lattice constant | μ m | a:2.504×10-10 c:6.692×10-10 | |
| Apparent density | g/cm3 | 2.0-2.19 | |
| Microhardness (Knoop) (ab plane) | N/mm2 | 691.88 | |
| Volume resistivity | Ω·cm | 3.11×1011 | |
| Tensile strength (|| "C") | N/mm2 | 153.86 | |
| Bending strength | (|| "C") | N/mm2 | 243.63 |
| (⊥"C") | N/mm2 | 197.76 | |
| Modulus of elasticity | N/mm2 | 235690 | |
| Thermal conductivity | W/m·k | "a"direction "c"direction | |
| (200°C) | W/m·k | 60 2.60 | |
| (900°C) | W/m·k | 43.70 2.80 | |
| Dielectric strength (room temperature) | KV/mm | 56 | |