FZ Ultra-high Resistivity Single Crystal Silicon Wafer is made from extreme purified intrinsic silicon ingot with normally over 10000Ω.cm or even higher resistivity and more than 800μs carrier lifetime, ideal for production of particular MOS components or photoelectronic devices, and perfect for scientific R&D projects in universities and colleges. 4" 5" 6" are available and can be customized, ingots available too.
Western Minmetals (SC) Corporation is a major supplier of FZ or CZ 2-8inch single crystal (Monocrystal) silicon ingot and wafer, Neutron Transmutation Doping (NTD) silicon wafer, and semiconductor compounds such as VGF Gallium Arsenide (GaAs), Indium Phosphide (InP), Gallium Phosphide (GaP), Indium Antimonide (InSb) and Indium Arsenide (InAs) substrate etc for solar photovoltaic, integrated circuits, transistor and other electronic industry.
It is our goal to be a consistent, reliable and an affordable source for our global clients at any time.
| No. | Items | Standard Specifications | |||
| 1 | Size | 4" | 5" | 6" | |
| 2 | Diameter | mm | 100 | 125 | 150 |
| 3 | Conductivity | N | N | N | |
| 4 | Resistivity | Ω.cm | >10000 or as required | ||
| 5 | Carrier Lifetime | μs min | >800, >1000 or as required | ||
| 6 | Surface Finish | P/E, P/P, L/L,E/E | |||
| 7 | Packing | Cassette or foam box inside, carton box outside | |||
Western Minmetals (SC) Corporation is a major supplier of FZ or CZ 2-8inch single crystal (Monocrystal) silicon ingot and wafer, Neutron Transmutation Doping (NTD) silicon wafer, and semiconductor compounds such as VGF Gallium Arsenide (GaAs), Indium Phosphide (InP), Gallium Phosphide (GaP), Indium Antimonide (InSb) and Indium Arsenide (InAs) substrate etc for solar photovoltaic, integrated circuits, transistor and other electronic industry.
It is our goal to be a consistent, reliable and an affordable source for our global clients at any time.