CGH40045 45 W, DC - 4 GHz RF Power GaN HEMT
Cree's CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities
making the ideal for linear and compressed amplifier circuits. The
transistor is available in a flange and pill package.
FEATURES
• Up to 4 GHz Operation
• 16 dB Small Signal Gain at 2.0 GHz
• 12 dB Small Signal Gain at 4.0 GHz
• 55 W Typical PSAT
• 55 % Efficiency at PSAT
• 28 V Operation
APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Why choosing us
- We are professional in RF Components for many years
- 100% guarantee components quality: 100% Genuine Original
- Sufficient stock on your urgent demand.
- Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
- Faster shipment: In stock components can ship the same day .
- 24 Hours service
- Many customers choosed us and Zero complaint from long cooperation
Notice:
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